Photoluminescence characterization of MBE grown Zn 1 ~ x Be x
نویسندگان
چکیده
We report photoluminescence (PL) studies of high-quality Zn 1~x Be x Se "lms grown by molecular beam epitaxy (MBE) on GaAs substrates by use of a novel growth method of Be}Zn co-irradiation before the growth of a thin ZnSe bu!er layer. Samples show double-crystal X-ray linewidth as narrow as 23 arcsec. Low-temperature (13K) PL of undoped samples showed free exciton emission, which de"ned the bandgap and showed that this system gives bandgap bowing. In addition, there was dominant deep bound excitonic recombination. We also suggest that deep PL can be caused by low structural quality of "lms, rather than by speci"c impurity states. Nitrogen-doped samples (with net acceptor concentrations up to 2]1017 cm~3) show strong impurity related photoluminescence. ( 2000 Elsevier Science B.V. All rights reserved. PACS: 78.55.!m; 78.55.Et; 81.5.Hi
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